The Rohm MOSFET, part number 10AC8609, is a dual N-channel and P-channel device designed for applications requiring a maximum drain-source voltage of 30V and continuous drain currents of ¬±7A for the N-channel and ¬±5.5A for the P-channel. The on-resistance is specified at a maximum of 29mOc for the N-channel and 48mOc for the P-channel, which contributes to efficient power management. This device features a small surface mount package (TSMT8) and is compliant with RoHS standards, ensuring it is environmentally friendly. The MOSFET can handle pulsed drain currents up to ¬±18A and has a power dissipation rating of 2.5W. The gate-source voltage is rated at ¬±20V, and the junction temperature can reach up to 150¬8C. Engineers may find this MOSFET suitable for various switching applications, given its low on-resistance and compact packaging. The device is supplied in embossed tape packaging, with a basic ordering unit of 3000 pieces, making it convenient for bulk purchasing.
MOSFET N/P-CH 30V 7A/5.5A TSMT8 Product overview: QH8MA3TCR from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 7A, 5.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 7A, 5.5A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-QH8MA3TCR can be used for catalog matching and distributor lookup.
Mosfet Array N and P-Channel 30V 7A, 5.5A 1.5W Surface Mount TSMT8
Mosfet Array N and P-Channel 30V 7A, 5.5A 1.5W Surface Mount TSMT8
Mosfet Array N and P-Channel 30V 7A, 5.5A 1.5W Surface Mount TSMT8
Manufacturer: Rohm Semiconductor
Win Source Part Number: 805347-QH8MA3TCR
Packaging: Reel
Mounting Style: SMD
FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.5W
Supplier Device Package: TSMT8
Temperature Range - Operating: 150°C
Manufacturer Package: 8-SMD, Flat Lead
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 29mOhm at 7A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 7.2nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 300pF at 15V
Current - Continuous Drain (Id) at 25°C: 7A, 5.5A
Vgs(th) (Maximum) at Id: 2.5V at 1mA
MOSFET, N AND P-CH, 30V, 7A, TSMT; Transistor Polarity:N and P Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power RoHS Compliant: Yes
MOSFET N/P-CH 30V 7A/5.5A TSMT8
MOSFET N/P-CH 30V TSMT8
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | RS Components, Ltd. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-QH8MA3TCR | QH8MA3TCRDKR-ND | 805347-QH8MA3TCR | 2643773 | 10AC8609 | QH8MA3TCR | QH8MA3TCR | QH8MA3TCR |
| Product Name | 30V 7A 5.5A MOSFET Transistor | FET, MOSFET Arrays | FETs - Arrays - QH8MA3TCR | MOSFETs | Mosfet, N And P-Ch, 30V, 7A, Tsmt; Transistor Polarity Rohm | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | FET, MOSFET Arrays |
| Polarity | N-Channel; P-Channel | P-Channel | P-Channel; N and P-Channel | |||||
| MOSFET Operating Mode | Enhancement | |||||||
| Transconductance | 0.0027 to 0.0033 kS | |||||||
| PD | 2.5 milliwatts | |||||||
| TJ | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) |
