N-Channel 600V 11A (Tc) 124W (Tc) Surface Mount TO-252
N-Channel 600V 11A (Tc) 124W (Tc) Surface Mount TO-252
MOSFET, N-CH, 600V, 11A, 150DEG C, 124W; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.34ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power RoHS Compliant: Yes
MOSFET NCH 600V 11A POWER MOSFET
NCH 600V 11A POWER MOSFET. POWE
MOSFET N-CH 600V 11A TO252
| DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | RF Transistors |
| Product Number | 846-R6011KND3TL1TR-ND | 38AH5897 | R6011KND3TL1 | 687-R6011KND3TL1 | R6011KND3TL1 |
| Product Name | Single FETs, MOSFETs | Mosfet, N-Ch, 600V, 11A, 150Deg C, 124W; Transistor Polarity Rohm | MOSFET | NCH 600V 11A POWER MOSFET. POWE | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | ||||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-3 | 740 pF @ 25 V | ||
| IDSS | 11000 milliamps | ||||
| rDS(on) | 0.3400 ohms | 0.3900 ohms | |||
| Transistor Technology / Material | SILICON |
