MOSFET 2P-CH 12V 4.5A TSMT8 Product overview: QS8J12TCR from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 4.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 4.5A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-QS8J12TCR can be used for catalog matching and distributor lookup.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 046011-QS8J12TCR
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate, 1.5V Drive
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TSMT8
Maximum Power Dissipation: 550mW
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 4.5A
Gate-Source Threshold Voltage: 1V @ 1mA
Max Gate Charge: 40nC @ 4.5V
Max Input Capacitance: 4200pF @ 6V
Maximum Rds On at Id,Vgs: 29 mOhm @ 4.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
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| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-QS8J12TCR | 046011-QS8J12TCR | QS8J12TCR-ND | QS8J12TCR | QS8J12TCR | QS8J12TCR |
| Product Name | 12V 4.5A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - QS8J12TCR | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | FET, MOSFET Arrays |
| Polarity | P-Channel | P-Channel | P-Channel; 2 P-Channel (Dual) | |||
| MOSFET Operating Mode | Enhancement | |||||
| Transconductance | 0.0055 kS | |||||
| PD | 1.5 milliwatts | 550 milliwatts | ||||
| TJ | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) |
