The QS5U21 is a P-channel MOSFET with an integrated Schottky barrier diode in a TSMT5 package, designed for load switch and DC/DC conversion applications with 2.5V gate drive. It has a drain-source voltage rating of -20V, continuous drain current of ±1.5A, and total power dissipation of 1.25W. The device features a maximum on-state resistance of 240mΩ at -4V gate-source voltage and -1.5A drain current, and a forward voltage of 0.45V for the integrated Schottky diode at 1.0A. The package measures 2.0mm × 2.1mm × 0.75mm and is RoHS compliant.
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
Small switching (-20V, -1.5A) Product overview: QS5U21 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -20V, -1.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -20V, -1.5A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-QS5U21 can be used for catalog matching and distributor lookup.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1241312-QS5U21
Manufacturer Homepage: www.rohm.com
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | QS5U21 | QS5U21 | 285-QS5U21 | 1241312-QS5U21 |
| Product Name | 2.5V Drive Pch+SBD MOSFET | 2.5V Drive Pch+SBD MOSFET | -20V -1.5A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - QS5U21 |
| Polarity | P-Channel | P-Channel | ||
| V(BR)DSS | -20 volts | -20 volts | ||
| IDSS | -1500 milliamps | -1500 milliamps | ||
| PD | 900 milliwatts | 900 milliwatts |
