ROHM Semiconductor USA, LLC Datasheets for Metal-Oxide Semiconductor FET (MOSFET)
Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.
Metal-Oxide Semiconductor FET (MOSFET): Learn more
| Product Name | Notes |
|---|---|
| MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to... | |
| Nch 600V 35A Power MOSFET | |
| Nch 600V 46A Power MOSFET | |
| Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various... | |
| R6030MNX is fast trr power MOSFET, suitable for switching power supply. | |
| R6047ENZ1 is Field-effect transistor MOSFET, with superiorfeatures of high-speed switching and low On-Resistance . | |
| R6076ENZ1 is Field-effect transistor MOSFET, with superiorfeatures of high-speed switching and low On-Resistance . | |
| RHP020N06FRA is the high reliability Automotive MOSFET. | |
| RHP030N03FRA is the high reliability Automotive MOSFET. | |
| RJP020N06FRA is the high reliability Automotive MOSFET. | |
| RK7002BMHZGis the high reliability Automotive MOSFET, suitable for switching and low-side load switch, relay driver. | |
| RQ3E130BN is high power package MOSFET. | |
| RQ3E180BN is low on-resistance and high power package MOSFET for switching application. | |
| The high power small mold package RF4C050AP is suitable for switching and load switch. | |
| Transistor |
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