MOSFET, one of Fild Effect Transistors. ROHM has low current type power MOSFETs of high-efficiency / high breakdown resistance for switching power supply to meet various needs in the market.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1091362-R6012ANX
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220FM
Dimension: TO-220-2 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 12A (Ta)
Gate-Source Threshold Voltage: 4.5V @ 1mA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 1300pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 420 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
N-Channel 600V 12A (Ta) 50W (Tc) Through Hole TO-220FM
MOSFET N-CH 600V 12A TO220FM
| ROHM Semiconductor USA, LLC | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | R6012ANX | 1091362-R6012ANX | R6012ANX-ND | R6012ANX | R6012ANX |
| Product Name | 10V Drive Nch MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - R6012ANX | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 600 volts | 600 volts | |||
| IDSS | 12000 milliamps | ||||
| PD | 50000 milliwatts | 50000 milliwatts |
