The EM6K31 is a dual N-channel MOSFET in an EMT6 package designed for low-voltage switching applications with a 2.5V drive capability. It has a drain-source voltage rating of 60V and a continuous drain current of ±250mA. The device features a maximum on-state resistance of 2.4Ω at V_GS = 10V and I_D = 250mA, with a total power dissipation of 150mW. It operates over a junction temperature range of -55°C to +150°C and is housed in a compact SOT-563 (EMT6) package. The part includes an integrated body diode with a continuous forward current rating of 125mA.
Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | EM6K31 | EM6K31 |
| Product Name | 2.5V Drive Nch+Nch MOSFET | 2.5V Drive Nch+Nch MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 60 volts | 60 volts |
| IDSS | 250 milliamps | 250 milliamps |
| PD | 150 milliwatts | 150 milliwatts |
