ROHM Semiconductor USA, LLC 12V 4A MOSFET Transistor QS8J2TR

MOSFET 2P-CH 12V 4A TSMT8 Product overview: QS8J2TR from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 4A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-QS8J2TR can be used for catalog matching and distributor lookup.

Mosfet Array 2 P-Channel (Dual) 12V 4A 550mW Surface Mount TSMT8

Mosfet Array 2 P-Channel (Dual) 12V 4A 550mW Surface Mount TSMT8

Mosfet Array 2 P-Channel (Dual) 12V 4A 550mW Surface Mount TSMT8

Win Source Part Number: 985175-QS8J2TR
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Power - Max: 550mW
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1940pF @ 6V
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 73 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: Rohm Semiconductor
Other Names: 846-QS8J2TR,QS8J2TR-ND,846-QS8J2CT,846-QS8J2DKR
Base Product Number: QS8J2

MOSFET 2P-CH 12V 4A TSMT8