The EM6M2 is a 20V N-channel and P-channel complementary MOSFET pair in an EMT6 surface-mount package, designed for low-voltage switching applications with 1.2V drive capability. It has a maximum continuous drain current of ±200mA and a power dissipation of 150mW. The N-channel device has a maximum on-resistance of 1.4Ω at 1.5V gate drive, and the P-channel device has a maximum on-resistance of 3.5Ω at -1.5V gate drive. The package measures 1.6mm × 1.2mm × 0.5mm and is supplied in 8000-piece tape reels. The device is rated for an operating junction temperature range of -55°C to +150°C and meets RoHS requirements.
Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | EM6M2 | EM6M2 |
| Product Name | 1.2V Drive Nch+Pch MOSFET | 1.2V Drive Nch+Pch MOSFET |
| Polarity | N-Channel; P-Channel | N-Channel; P-Channel |
| V(BR)DSS | 20 volts | 20 volts |
| IDSS | 200 milliamps | 200 milliamps |
| PD | 150 milliwatts | 150 milliwatts |
