R6020ENZ is an N-channel 600V 20A power MOSFET in a TO-3PF package, designed for switching applications. It has a maximum drain-source on-resistance of 0.196Ω at 25°C and a continuous drain current of ±20A at 25°C, reducing to ±9.4A at 100°C. The device supports a pulsed drain current of ±60A and can dissipate up to 120W at 25°C. Thermal resistance from junction to case is 1.04°C/W and junction to ambient is 40°C/W. The gate-source voltage is guaranteed to ±20V, and the device is RoHS compliant. It has a single-pulse avalanche energy rating of 418 mJ and a maximum junction temperature of 150°C. Operating and storage temperature range is from -55°C to +150°C.
R6020ENZ is a power MOSFET with low ON-resistance and fast switching, suitable for the switching application.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | R6020ENZ | R6020ENZ |
| Product Name | 600V 20A TO-3PF, Low-noise Power MOSFET | 10V Drive Nch MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 600 volts | 600 volts |
| IDSS | 20000 milliamps | 20000 milliamps |
| QG | 60 nC | |
| PD | 120000 milliwatts | 120000 milliwatts |
