The QS8J4 is a -30V P-channel dual MOSFET in a TSMT8 surface-mount package, designed for switching applications. It has a continuous drain current rating of ±4 A and a maximum on-resistance of 56 mΩ at -10 V gate voltage. Power dissipation is rated at 1.5 W, with thermal resistance of 83.3 ℃/W on a ceramic board and 113 ℃/W on FR4. The device includes built-in gate-source protection diodes, is RoHS compliant, and operates from -55 ℃ to +150 ℃. The package measures 2.5 mm × 2.8 mm, with a height of 0.8 mm.
Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | QS8J4 | QS8J4 |
| Product Name | -30V Pch+Pch Small Signal MOSFET | 4V Drive Pch+Pch MOSFET |
| Polarity | P-Channel | P-Channel |
| Package Type | TSMT8 | TSMT8 |
| Transistor Grade / Operating Range | Commercial | |
| V(BR)DSS | -30 volts |
