ROHM Semiconductor USA, LLC 10V Drive Nch MOSFET R6015FNX

Description
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Request a Quote Datasheet
Description
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
10V Drive Nch MOSFET - R6015FNX - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
10V Drive Nch MOSFET
R6015FNX
10V Drive Nch MOSFET R6015FNX
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Supplier's Site Datasheet
Single FETs, MOSFETs - 846-R6015FNX-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
846-R6015FNX-ND
Single FETs, MOSFETs 846-R6015FNX-ND
N-Channel 600V 15A (Ta) 50W (Tc) Through Hole TO-220FM

N-Channel 600V 15A (Ta) 50W (Tc) Through Hole TO-220FM

Buy Now Datasheet
Singapore
600V 15A MOSFET Transistor
278-R6015FNX
600V 15A MOSFET Transistor 278-R6015FNX
MOSFET N-CH 600V 15A TO-220FM Product overview: R6015FNX from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 15A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 15A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-R6015FNX can be used for catalog matching and distributor lookup.

MOSFET N-CH 600V 15A TO-220FM Product overview: R6015FNX from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 15A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 15A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-R6015FNX can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - R6015FNX - 1091366-R6015FNX - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - R6015FNX
1091366-R6015FNX
TRANSISTORS - Transistors - FETs, MOSFETs - RF - R6015FNX 1091366-R6015FNX
Manufacturer: Rohm Semiconductor Win Source Part Number: 1091366-R6015FNX Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220FM Dimension: TO-220-2 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 15A (Ta) Gate-Source Threshold Voltage: 5V @ 1mA Max Gate Charge: 42nC @ 10V Max Input Capacitance: 1660pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 350 mOhm @ 7.5A, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance

Manufacturer: Rohm Semiconductor
Win Source Part Number: 1091366-R6015FNX
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220FM
Dimension: TO-220-2 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 15A (Ta)
Gate-Source Threshold Voltage: 5V @ 1mA
Max Gate Charge: 42nC @ 10V
Max Input Capacitance: 1660pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 350 mOhm @ 7.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - R6015FNX - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
R6015FNX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs R6015FNX
MOSFET N-CH 600V 15A TO-220FM

MOSFET N-CH 600V 15A TO-220FM

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
R6015FNX
MOSFET R6015FNX
MOSFET Trans MOSFET N-CH 600V 15A

MOSFET Trans MOSFET N-CH 600V 15A

Buy Now Datasheet

Technical Specifications

  ROHM Semiconductor USA, LLC DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number R6015FNX 846-R6015FNX-ND 278-R6015FNX 1091366-R6015FNX R6015FNX R6015FNX
Product Name 10V Drive Nch MOSFET Single FETs, MOSFETs 600V 15A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - R6015FNX Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 600 volts 600 volts
IDSS 15000 milliamps
PD 50000 milliwatts 77 milliwatts 50000 milliwatts
TJ -55 to 150 C (-67 to 302 F) 150 C (302 F) 150 C (302 F)
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