The QS5U17 is a combined N-channel MOSFET and Schottky barrier diode in a TSMT5 package, designed for load switching and DC/DC conversion with 2.5V gate drive capability. The device has a 30V drain-source voltage rating, continuous drain current of ±2.0A, and an on-state resistance of 110 mΩ at VGS=2.5V and ID=2.0A. The integrated Schottky diode has a forward voltage of 0.45V at 1.0A and a reverse voltage rating of 20V. The package measures 2.9mm × 1.9mm with 0.95mm lead pitch. It is rated for operation from −55°C to +150°C and meets total power dissipation of 1.25W on a ceramic board. The product is packaged in tape and reel quantities of 3000 pieces.
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
Small switching (30V, 2.0A) Product overview: QS5U17 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 2.0A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 2.0A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-QS5U17 can be used for catalog matching and distributor lookup.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1241311-QS5U17
Manufacturer Homepage: www.rohm.com
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Sufficient
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | QS5U17 | QS5U17 | 285-QS5U17 | 1241311-QS5U17 |
| Product Name | 2.5V Drive Nch+SBD MOSFET | 2.5V Drive Nch+SBD MOSFET | 30V 2.0A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - QS5U17 |
| Polarity | N-Channel | N-Channel | ||
| V(BR)DSS | 30 volts | 30 volts | ||
| IDSS | 2000 milliamps | 2000 milliamps | ||
| PD | 900 milliwatts | 900 milliwatts |
