The QS5U27 is a P-channel MOSFET with an integrated Schottky barrier diode in a TSMT5 package, designed for load switch and DC/DC conversion applications. It supports a drain-source voltage of -20V and a continuous drain current of ±1.5A, with a maximum on-state resistance of 340mΩ at -2.5V gate drive. The device operates with a total power dissipation of 1.25W and is RoHS compliant. The integrated Schottky diode has a reverse voltage rating of 20V and a forward voltage of up to 0.45V at 1.0A. The junction temperature ranges from -55°C to 150°C. The package dimensions and tape reel packaging (180mm reel, 8mm tape width, 3000 pcs per reel) are specified for automated assembly.
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
Small switching (-20V, -1.5A) Product overview: QS5U27 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -20V, -1.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -20V, -1.5A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-QS5U27 can be used for catalog matching and distributor lookup.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1241314-QS5U27
Manufacturer Homepage: www.rohm.com
RoHS State: Request Verification
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | QS5U27 | QS5U27 | 285-QS5U27 | 1241314-QS5U27 |
| Product Name | 2.5V Drive Pch+SBD MOSFET | 2.5V Drive Pch+SBD MOSFET | -20V -1.5A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - QS5U27 |
| Polarity | P-Channel | P-Channel | ||
| V(BR)DSS | -20 volts | -20 volts | ||
| IDSS | -1500 milliamps | -1500 milliamps | ||
| PD | 900 milliwatts | 900 milliwatts |
