ROHM Semiconductor USA, LLC 2.5V Drive Nch MOSFET 2SK3019EB

Description
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
Description
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.

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2.5V Drive Nch MOSFET - 2SK3019EB - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
2.5V Drive Nch MOSFET
2SK3019EB
2.5V Drive Nch MOSFET 2SK3019EB
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.

Supplier's Site

Technical Specifications

  ROHM Semiconductor USA, LLC
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 2SK3019EB
Product Name 2.5V Drive Nch MOSFET
Polarity N-Channel
V(BR)DSS 30 volts
IDSS 100 milliamps
PD 150 milliwatts
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