The QS5U16 is a combined N-channel MOSFET and Schottky barrier diode in a TSMT5 package, designed for load switch and DC/DC conversion applications with 2.5V gate drive. The package measures 2.9 mm × 1.9 mm with a maximum height of 1.0 mm. The MOSFET supports a drain-source voltage of 30 V and continuous drain current of ±2.0 A, with a typical on-state resistance of 71 mΩ at 4.5 V gate drive and 110 mΩ at 2.5 V gate drive. The Schottky diode has a forward voltage of 0.36 V at 0.1 A and 0.47 V at 0.5 A, and a reverse voltage rating of 20 V. Total power dissipation is limited to 1.25 W, with a junction temperature range of −55°C to +150°C. The device meets RoHS standards.
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
Small switching (30V, 2.0A) Product overview: QS5U16 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 2.0A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 2.0A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-QS5U16 can be used for catalog matching and distributor lookup.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1241310-QS5U16
Manufacturer Homepage: www.rohm.com
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Sufficient
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | QS5U16 | QS5U16 | 285-QS5U16 | 1241310-QS5U16 |
| Product Name | 2.5V Drive Nch+SBD MOSFET | 2.5V Drive Nch+SBD MOSFET | 30V 2.0A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - QS5U16 |
| Polarity | N-Channel | N-Channel | ||
| V(BR)DSS | 30 volts | 30 volts | ||
| IDSS | 2000 milliamps | 2000 milliamps | ||
| PD | 900 milliwatts | 900 milliwatts |
