ROHM Semiconductor USA, LLC 600V 4A MOSFET Transistor R6004ENDTL

MOSFET N-CH 600V 4A CPT3 Product overview: R6004ENDTL from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-R6004ENDTL can be used for catalog matching and distributor lookup.

N-Channel 600V 4A (Tc) 20W (Tc) Surface Mount CPT3

N-Channel 600V 4A (Tc) 20W (Tc) Surface Mount CPT3

Win Source Part Number: 1013385-R6004ENDTL
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 20W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: CPT3
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 72 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Affected
HTSUS: 8541.29.0095
Mfr: Rohm Semiconductor
Other Names: R6004ENDTLTR,R6004ENDTLDKR,R6004ENDTLCT
Base Product Number: R6004
Drive Voltage (Max Rds On, Min Rds On): 10V