Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1241325-QS6M4
Manufacturer Homepage: www.rohm.com
Alternative Parts (Cross-Reference): FDC6333C; AP2530GY-HF-3TR; QS6M3;
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
Small switching Product overview: QS6M4 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-QS6M4 can be used for catalog matching and distributor lookup.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | QS6M4 | QS6M4 | 1241325-QS6M4 | 285-QS6M4 |
| Product Name | 2.5V Drive Nch+Pch MOSFET | 2.5V Drive Nch+Pch MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - QS6M4 | MOSFET Transistor |
| Polarity | N-Channel; P-Channel | N-Channel; P-Channel | ||
| V(BR)DSS | 30 volts | 30 volts | ||
| IDSS | 1500 milliamps | 1500 milliamps | ||
| PD | 1250 milliwatts | 1250 milliwatts |
