Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1241325-QS6M4
Manufacturer Homepage: www.rohm.com
Alternative Parts (Cross-Reference): FDC6333C; AP2530GY-HF-3TR; QS6M3;
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | Win Source Electronics | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | QS6M4 | QS6M4 | 1241325-QS6M4 |
| Product Name | 2.5V Drive Nch+Pch MOSFET | 2.5V Drive Nch+Pch MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - QS6M4 |
| Polarity | N-Channel; P-Channel | N-Channel; P-Channel | |
| V(BR)DSS | 30 volts | 30 volts | |
| IDSS | 1500 milliamps | 1500 milliamps | |
| PD | 1250 milliwatts | 1250 milliwatts |
