N-channel 600V 4A Power MOSFET in a TO-263S package with a maximum drain-source on-state resistance of 0.98Ω at 25°C and a power dissipation of 58W. It features fast switching, a gate-source voltage rating of ±20V, and is RoHS compliant. The device supports continuous drain currents up to 4.0A at 25°C, with thermal resistance from junction to case of 2.2°C/W and junction temperature range of -55°C to +150°C. Avalanche energy for a single pulse is rated at 46mJ.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | R6004ENJ | R6004ENJ |
| Product Name | 600V 4A TO-263, Low-noise Power MOSFET | 10V Drive Nch MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 600 volts | 600 volts |
| IDSS | 4000 milliamps | 4000 milliamps |
| QG | 15 nC | |
| PD | 40000 milliwatts | 40000 milliwatts |
