The HP8K22TB is a dual N-channel power MOSFET designed for applications requiring efficient switching and power management. It features a maximum drain-source voltage (VDS) of 30V and can handle continuous drain currents of ¬±27A and ¬±57A for its respective channels. The device has a low on-resistance, with a maximum RDS(on) of 8.8mOc for one channel and 4.6mOc for the other, which contributes to reduced power loss during operation. This MOSFET is suitable for use in DC/DC converters and other switching applications, with a power dissipation capability of 22W and 25W for the two channels. The operating temperature range is from -55¬8C to +150¬8C, making it versatile for various environmental conditions. The product is packaged in an 8-HSOP format and is supplied on a reel with 2500 pieces per package, facilitating automated assembly processes. The HP8K22TB is RoHS compliant and halogen-free, ensuring it meets environmental regulations. Its low gate threshold voltage and fast switching characteristics make it an appropriate choice for high-frequency applications.
Mosfet Array 2 N-Channel (Half Bridge) 30V 27A, 57A 25W Surface Mount 8-HSOP
Mosfet Array 2 N-Channel (Half Bridge) 30V 27A, 57A 25W Surface Mount 8-HSOP
Mosfet Array 2 N-Channel (Half Bridge) 30V 27A, 57A 25W Surface Mount 8-HSOP
MOSFET 2N-CH 30V 27A/57A 8HSOP Product overview: HP8K22TB from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 27A, 57A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 27A, 57A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-HP8K22TB can be used for catalog matching and distributor lookup.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 873854-HP8K22TB
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: Mosfet Array 2 N-Channel (Half Bridge) 30V 27A, 57A 25W Surface Mount 8-HSOP
Package: 8-PowerTDFN
Package: Reel - TR
Mounting: Surface Mount
Family Name: HP8K22
Categories: Discrete Semiconductor Products
Case / Package: 8-HSOP
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited
Quantity per package: 2500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 19 Weeks
REACH Status: REACH Affected
HTSUS: 8541.29.0095
Other Part Number: HP8K22TBCT, HP8K22TBDKR, HP8K22TBTR
30V NCH NCH MID POWER MOSFET
MOSFET 2N-CH 30V 27A/57A 8HSOP
30V NCH+NCH MID POWER MOSFET
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | HP8K22TBDKR-ND | 289-HP8K22TB | 873854-HP8K22TB | 687-HP8K22TB | HP8K22TB | HP8K22TB | HP8K22TB |
| Product Name | FET, MOSFET Arrays | 30V 27A 57A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - HP8K22TB | 30V NCH NCH MID POWER MOSFET | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | FET, MOSFET Arrays |
| Package Type | 8-PowerTDFN | Tape & Reel (TR) | SOT3; 8-HSOP | 8-PowerTDFN | |||
| Polarity | N-Channel | N-Channel | N-Channel; 2 N-Channel (Half Bridge) | ||||
| MOSFET Operating Mode | Enhancement | ||||||
| Transconductance | 0.0100 to 0.0180 kS | ||||||
| PD | 3 milliwatts |
