ROHM Semiconductor USA, LLC 1.5V Drive Pch+Pch MOSFET QS8J12

Description
Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
  • 1.5V Drive Pch+Pch MOSFET - QS8J12 - ROHM Semiconductor USA, LLC
    ROHM Semiconductor USA, LLC
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - QS8J12 - 042275-QS8J12 - Win Source Electronics
    Win Source Electronics
Request a Quote Datasheet
Description
Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Request a Quote Datasheet

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1.5V Drive Pch+Pch MOSFET - QS8J12 - ROHM Semiconductor USA, LLC
ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
1.5V Drive Pch+Pch MOSFET
QS8J12
1.5V Drive Pch+Pch MOSFET QS8J12
Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - QS8J12 - 042275-QS8J12 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - QS8J12
042275-QS8J12
TRANSISTORS - Transistors - FETs, MOSFETs - RF - QS8J12 042275-QS8J12
Manufacturer: Rohm Semiconductor Win Source Part Number: 042275-QS8J12 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate, 1.5V Drive Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TSMT8 Maximum Power Dissipation: 550mW Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 4.5A Gate-Source Threshold Voltage: 1V @ 1mA Max Gate Charge: 40nC @ 4.5V Max Input Capacitance: 4200pF @ 6V Maximum Rds On at Id,Vgs: 29 mOhm @ 4.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance

Manufacturer: Rohm Semiconductor
Win Source Part Number: 042275-QS8J12
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate, 1.5V Drive
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TSMT8
Maximum Power Dissipation: 550mW
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 4.5A
Gate-Source Threshold Voltage: 1V @ 1mA
Max Gate Charge: 40nC @ 4.5V
Max Input Capacitance: 4200pF @ 6V
Maximum Rds On at Id,Vgs: 29 mOhm @ 4.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
12V 4.5A MOSFET Transistor
285-QS8J12
12V 4.5A MOSFET Transistor 285-QS8J12
MOSFET 2P-CH 12V 4.5A TSMT8 Product overview: QS8J12 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 4.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 4.5A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-QS8J12 can be used for catalog matching and distributor lookup.

MOSFET 2P-CH 12V 4.5A TSMT8 Product overview: QS8J12 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 4.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 4.5A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-QS8J12 can be used for catalog matching and distributor lookup.

Supplier's Site

Technical Specifications

  ROHM Semiconductor USA, LLC Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number QS8J12 042275-QS8J12 285-QS8J12
Product Name 1.5V Drive Pch+Pch MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - QS8J12 12V 4.5A MOSFET Transistor
Polarity P-Channel P-Channel
V(BR)DSS -12 volts 12 volts
IDSS -4500 milliamps
PD 1500 milliwatts 550 milliwatts 550 milliwatts
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