ROHM Semiconductor USA, LLC Single FETs, MOSFETs R6018JNJGTL

Description
N-Channel 600V 18A (Tc) 220W (Tc) Surface Mount LPTS
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Description
N-Channel 600V 18A (Tc) 220W (Tc) Surface Mount LPTS
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - R6018JNJGTLTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
R6018JNJGTLTR-ND
Single FETs, MOSFETs R6018JNJGTLTR-ND
N-Channel 600V 18A (Tc) 220W (Tc) Surface Mount LPTS

N-Channel 600V 18A (Tc) 220W (Tc) Surface Mount LPTS

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Single FETs, MOSFETs - R6018JNJGTLDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
R6018JNJGTLDKR-ND
Single FETs, MOSFETs R6018JNJGTLDKR-ND
N-Channel 600V 18A (Tc) 220W (Tc) Surface Mount LPTS

N-Channel 600V 18A (Tc) 220W (Tc) Surface Mount LPTS

Buy Now Datasheet
Single FETs, MOSFETs - R6018JNJGTLCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
R6018JNJGTLCT-ND
Single FETs, MOSFETs R6018JNJGTLCT-ND
N-Channel 600V 18A (Tc) 220W (Tc) Surface Mount LPTS

N-Channel 600V 18A (Tc) 220W (Tc) Surface Mount LPTS

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1014847-R6018JNJGTL - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1014847-R6018JNJGTL
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1014847-R6018JNJGTL
Win Source Part Number: 1014847-R6018JNJGTL Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 1,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 286mOhm @ 9A, 15V Vgs(th) (Max) @ Id: 7V @ 4.2mA Power Dissipation (Max): 220W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: LPTS Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 59 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Affected HTSUS: 8541.29.0095 Mfr: Rohm Semiconductor Other Names: R6018JNJGTLCT,R6018J NJGTLTR,R6018JNJGTLD KR Base Product Number: R6018 Drive Voltage (Max Rds On, Min Rds On): 15V

Win Source Part Number: 1014847-R6018JNJGTL
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 286mOhm @ 9A, 15V
Vgs(th) (Max) @ Id: 7V @ 4.2mA
Power Dissipation (Max): 220W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: LPTS
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 59 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Affected
HTSUS: 8541.29.0095
Mfr: Rohm Semiconductor
Other Names: R6018JNJGTLCT,R6018JNJGTLTR,R6018JNJGTLDKR
Base Product Number: R6018
Drive Voltage (Max Rds On, Min Rds On): 15V

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET NCH 600V 18A POWER

MOSFET NCH 600V 18A POWER

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Mosfet, N-Ch, 18A, 600V, To-263S; Transistor Polarity Rohm - 01AH7813 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 18A, 600V, To-263S; Transistor Polarity Rohm
01AH7813
Mosfet, N-Ch, 18A, 600V, To-263S; Transistor Polarity Rohm 01AH7813
MOSFET, N-CH, 18A, 600V, TO-263S; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.22ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:6V; Power DissipationRoHS Compliant: Yes

MOSFET, N-CH, 18A, 600V, TO-263S; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.22ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:6V; Power DissipationRoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - R6018JNJGTL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
R6018JNJGTL
Discrete Semiconductor Products - Transistors - FETs, MOSFETs R6018JNJGTL
MOSFET N-CH 600V 18A LPTS

MOSFET N-CH 600V 18A LPTS

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number R6018JNJGTLTR-ND 1014847-R6018JNJGTL R6018JNJGTL 01AH7813 R6018JNJGTL
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFET Mosfet, N-Ch, 18A, 600V, To-263S; Transistor Polarity Rohm Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB SOT3 TO-3; TO-263 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PD 220000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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