The QS8J2 is a twin P-channel MOSFET in a TSMT8 surface-mount package, designed for switching applications with low gate drive requirements. It has a drain-source voltage rating of -12 V and continuous drain current of ±4 A, with a maximum power dissipation of 1.5 W. The device features low on-resistance up to 36 mΩ at -4.5 V gate drive and is driven at -1.5 V, making it suitable for low-voltage control. It includes built-in gate-source protection diodes and is RoHS compliant. Thermal resistance from junction to ambient is 83.3 °C/W when mounted on a ceramic board. The package dimensions and tape reel specifications are standardized for automated assembly with a 3000-piece order unit on an 180 mm reel.
Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | QS8J2 | QS8J2 |
| Product Name | 1.5V Drive Pch+Pch MOSFET | 1.5V Drive Pch+Pch MOSFET |
| Polarity | P-Channel | P-Channel |
| V(BR)DSS | -12 volts | -12 volts |
| IDSS | -4000 milliamps | -4000 milliamps |
| PD | 1500 milliwatts | 1500 milliwatts |
