MOSFET N-CH 600V 4A TO252 Product overview: R6004END3TL1 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 4A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 4A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-R6004END3TL1 can be used for catalog matching and distributor lookup.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 891105-R6004END3TL1
Operating Temperature Range: 150°C (TJ)
Features: N-Channel 600 V 4A (Tc) 59W (Tc) Surface Mount TO-252
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Package: Reel - TR
Mounting: Surface Mount
Family Name: R6004
Categories: Discrete Semiconductor Products
Case / Package: TO-252
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
Quantity per package: 2500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 17 Weeks
HTSUS: 8541.29.0095
Other Part Number: 846-R6004END3TL1DKR,
600V 4A TO-252 Low-noise Power MOSFET
600V 4A TO-252 Low-noise Power MOSFET
600V 4A TO-252 Low-noise Power MOSFET
N-Channel 600V 4A (Tc) 59W (Tc) Surface Mount TO-252
N-Channel 600V 4A (Tc) 59W (Tc) Surface Mount TO-252
N-Channel 600V 4A (Tc) 59W (Tc) Surface Mount TO-252
MOSFET N-CH 600V 4A TO252
MOSFET NCH 600V 4A POWER MOSFET
MOSFET, N-CH, 600V, 4A, 150DEG C, 59W; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.9ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET N-CH 600V 4A TO252
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | RS Components, Ltd. | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-R6004END3TL1 | 891105-R6004END3TL1 | 2643776P | 846-R6004END3TL1DKR-ND | R6004END3TL1 | R6004END3TL1 | 38AH5890 | R6004END3TL1 |
| Product Name | 600V 4A TO252 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - R6004END3TL1 | MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 600V, 4A, 150Deg C, 59W; Transistor Polarity Rohm | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||||
| Transconductance | 0.0015 kS | |||||||
| PD | 59 milliwatts | 59000 milliwatts | ||||||
| TJ | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) |
