Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
MOSFET N-CH 600V 7A TO220FM Product overview: R6007ENX from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-R6007ENX can be used for catalog matching and distributor lookup.
N-Channel 600V 7A (Tc) 40W (Tc) Through Hole TO-220FM
Manufacturer: Rohm Semiconductor
Win Source Part Number: 793005-R6007ENX
Packaging: Bulk
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-220-2 Full Pack
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Family Name: R6007ENX
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-220FM
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 4V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 390pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 40W (Tc)
Rds On (Maximum) @ Id, Vgs: 620 mOhm @ 2.4A, 10V
Alternative Parts (Cross-Reference): AOTF11N62L; STP9NB60FP; STU9NA60; AOTF10T60;
Introduction Date: March 27, 2013
ECCN: EAR99
Estimated EOL Date: 2031
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Limited
MOSFET N-CH 600V 7A TO220FM
MOSFET, N-CH, 600V, 7A, TO-220FM; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.57ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes
MOSFET N-CH 600V 7A TO220
MOSFET N-CH 600V 7A TO220FM
| ROHM Semiconductor USA, LLC | ROHM Semiconductor GmbH | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | R6007ENX | R6007ENX | 278-R6007ENX | R6007ENX-ND | 793005-R6007ENX | R6007ENX | 99Y2385 | 687-R6007ENX | R6007ENX | R6007ENX |
| Product Name | 10V Drive Nch MOSFET | 600V 7A TO-220FM, Low-noise Power MOSFET | 600V 7A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - R6007ENX | Single FETs, MOSFETs | Mosfet, N-Ch, 600V, 7A, To-220Fm; Transistor Polarity Rohm | MOSFET N-CH 600V 7A TO220 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||||
| V(BR)DSS | 600 volts | 600 volts | 600 volts | 600 volts | ||||||
| IDSS | 7000 milliamps | 7000 milliamps | 7000 milliamps | 7000 milliamps | ||||||
| PD | 40000 milliwatts | 40000 milliwatts | 46 milliwatts | 40000 milliwatts | 40000 milliwatts | 40000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) |
