ROHM Semiconductor USA, LLC Datasheets for Metal-Oxide Semiconductor FET (MOSFET)

Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.
Metal-Oxide Semiconductor FET (MOSFET): Learn more

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Product Name Notes
1700V 3.7A N-channel SiC (Silicon Carbide) power MOSFET. ROHM Featured Products SCT2H12NZ(1700V SiC-MOSFET) and BD7682FJ-LB(AC/DC Converter IC) Evaluation Board Apprication Note (PDF: 1.9MB), Presentation Document (PDF: 1.0MB), Buy Evaluation Board...
650V 29A N-channel SiC power MOSFET
Automotive MOSFETs
MOSFET, one of Fild Effect Transistors. ROHM has low current type power MOSFETs of high-efficiency / high breakdown resistance for switching power supply to meet various needs in the market.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to...
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various...
ROHM recommends RE1C002UN as standard spec.
ROHM recommends RE1J002YN as standard spec.
ROHM recommends RU1E002SP as standard spec.
ROHM recommends RZF013P01 as standard spec.
ROHM recommends RZF020P01 as standard spec.
RSS065N06FRA is the high reliability Automotive MOSFET, suitable for switching application.
RSS090N03FRA is the high reliability Automotive transistor, suitable for switching applications.
RSS095N05FRA is a Power MOSFET with Low on-resistance, suitable for switching. It is a highly reliable product for automotive.
RSS100N03FRA is the high reliability automotive MOSFET, suitable for switching application.
RTQ020N05FRA is the high reliability Automotive MOSFET, suitable for the switching application.
RUC002N05HZGis the high reliability Automotive MOSFET, suitable for switching and low-side load switch, relay driver.
RV3CA01ZP is the 0604 size ultra-small package MOSFET for for portable devices.
RXL035N03 is low on-resistance and small surface mount package MOSFET for switching application.
SCT3030AR is an SiC MOSFET featuring a trench gate structure optimized for server power supplies, solar power inverters, and EV charging stations requiring high efficiency. A new 4-pin package is...
SCT3040KR is an SiC MOSFET featuring a trench gate structure optimized for server power supplies, solar power inverters, and EV charging stations requiring high efficiency. A new 4-pin package is...
SCT3060AR is an SiC MOSFET featuring a trench gate structure optimized for server power supplies, solar power inverters, and EV charging stations requiring high efficiency. A new 4-pin package is...
SCT3080AR is an SiC MOSFET featuring a trench gate structure optimized for server power supplies, solar power inverters, and EV charging stations requiring high efficiency. A new 4-pin package is...
SCT3080KR is an SiC MOSFET featuring a trench gate structure optimized for server power supplies, solar power inverters, and EV charging stations requiring high efficiency. This new series adopts a...
SCT3105KR is an SiC MOSFET featuring a trench gate structure optimized for server power supplies, solar power inverters, and EV charging stations requiring high efficiency. A new 4-pin package is...
The small package(1006size) RV2C014BC is suitable for portable devices.
The Ultra Small Package(0806size).
The ultra-small package RV3C001ZP is suitable for portable devices.
The ultra-small package RV3C002UN is suitable for portable devices.
The ultra-small package(1006size) RV2C001ZP is suitable for portable devices.
The ultra-small package(1006size) RV2C002UN is suitable for portable devices.
This is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed.
This is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD not co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed.
Transistor

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