ROHM Semiconductor USA, LLC Datasheets for Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
Transistors: Learn more
Product Name | Notes |
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2SA2071P5 is a power transistor for high speed switching. | |
2SAR293P5 is Low VCE(sat) Middle Power Driver Transistor for Low Frequency Amplifier. | |
2SAR502EBHZG is a bipolar transistor with large collector current, suitable for low frequency amplifier. It is a highly reliable product for automotive. | |
2SAR502UBHZG is a bipolar transistor with large collector current, suitable for low frequency amplifier. It is a highly reliable product for automotive. | |
2SAR512P5 is Low saturation voltage and high speed switching transistor for low frequency amplifier. | |
2SAR513P5 is Low saturation voltage and high speed switching transistor for low frequency amplifier. | |
2SAR514P5 is Low saturation voltage and high speed switching transistor for low frequency amplifier. | |
2SAR533P5 is Low saturation voltage and high speed switching transistor for low frequency amplifier. | |
2SAR544P5 is Low saturation voltage and high speed switching transistor for low frequency amplifier. | |
2SAR552P5 is Low saturation voltage and high speed switching transistor for low frequency amplifier. | |
2SAR553P5 is Low saturation voltage and high speed switching transistor for low frequency amplifier. | |
2SAR554P5 is Low saturation voltage and high speed switching transistor for low frequency amplifier. | |
2SAR586D is Low saturation voltage transistor for low frequency amplifier. | |
2SB1197KFRA is the high reliability Automotive transistor, suitable for low frequency power amplifier. | |
2SC4081UBHZG is bipolar transistor for general purpose small signal amplifier. | |
2SC4617EBHZG is bipolar transistor for general purpose small signal amplifier. | |
2SCR293P5 is Low VCE(sat) Middle Power Driver Transistor for Low Frequency Amplifier. | |
2SCR372P5 is Low saturation voltage transistor for low frequency amplifier. | |
2SCR375P5 is Low saturation voltage transistor for low frequency amplifier. | |
2SCR502EBHZG is a bipolar transistor with large collector current, suitable for low frequency amplifier. It is a highly reliable product for automotive. | |
2SCR502UBHZG is a bipolar transistor with large collector current, suitable for low frequency amplifier. It is a highly reliable product for automotive. | |
2SCR512P5 is Low saturation voltage and high speed switching transistor for low frequency amplifier. | |
2SCR513P5 is Low saturation voltage and high speed switching transistor for low frequency amplifier. | |
2SCR514P5 is Low saturation voltage and high speed switching transistor for low frequency amplifier. | |
2SCR533P5 is Low saturation voltage and high speed switching transistor for low frequency amplifier. | |
2SCR544P5 is Low saturation voltage and high speed switching transistor for low frequency amplifier. | |
2SCR552P5 is Low saturation voltage and high speed switching transistor for low frequency amplifier. | |
2SCR553P5 is Low saturation voltage and high speed switching transistor for low frequency amplifier. | |
2SCR554P5 is Low saturation voltage and high speed switching transistor for low frequency amplifier. | |
2SCR586D is Low saturation voltage transistor for low frequency amplifier. | |
Automoitve NPN 2.0A 80V Middle Power Transistor | |
Automoitve NPN 3.0A 50V Middle Power Transistor | |
Automoitve NPN 5.0A 30V Middle Power Transistor | |
Automoitve PNP -2.0A -80V Middle Power Transistor | |
Automoitve PNP -5.0A -30V Middle Power Transistor | |
Automotive Bipolar Transistors | |
Automotive Digital Transistors | |
Automotive PNP -100mA -50V Digital Transistor | |
Automotive PNP -3.0A -50V Middle Power Transistor | |
Automotive Power MOSFET AG009DGQ3 realize the high mounting reliability by ROHM original terminal and plating treatment. | |
BA12003B is darlinton transistor array consist of 7circuits, input resistor to limit base current and output surge absorption clamp diode. | |
BA12003BF is darlinton transistor array consist of 7circuits, input resistor to limit base current and output surge absorption clamp diode. | |
BA12004B is darlinton transistor array consist of 7circuits, input resistor to limit base current and output surge absorption clamp diode. | |
BA12004BF is darlinton transistor array consist of 7circuits, input resistor to limit base current and output surge absorption clamp diode. | |
BC847B is bipolar transistor for audio frequency small signal amplifier | |
BC847BHZG is the high reliability Automotive transistor, suitable for audio frequency small signal amplifier. | |
BC848B is bipolar transistor for audio frequency small signal amplifier | |
BC848BHZG is the high reliability Automotive transistor, suitable for audio frequency small signal amplifier. | |
BC857B is bipolar transistor for audio frequency small signal amplifier | |
BC857BHZG is the high reliability Automotive transistor, suitable for audio frequency small signal amplifier. | |
BC858B is bipolar transistor for audio frequency small signal amplifier | |
BC858BHZG is the high reliability Automotive transistor, suitable for audio frequency small signal amplifier. | |
BCX17 is high gain and low saturation voltage transistor which is ideal for small load switching applications. | |
BCX17HZG is the high reliability Automotive transistor, suitable for audio frequency small signal amplifier. | |
BCX19 is high gain and low saturation voltage transistor for audio frequency small signal amplifier. | |
BCX19HZG is the high reliability Automotive transistor, suitable for audio frequency small signal amplifier. | |
BM65364S-VA is an Intelligent Power Module composed of gate drivers, bootstrap diodes, MOSFETs. | |
BM65364S-VC is an Intelligent Power Module composed of gate drivers, bootstrap diodes, MOSFETs. | |
BSM080D12P2C008 is a half bridge module consisting of SiC-DMOS and SiC SBD. | |
BSM180C12P3C202 is a SiC (silicon carbide) power module with Low surge and low switching loss, suitable for motro drive, converter, photovoltaics, wind power generation. | |
BSM180D12P3C007 is a half bridge module consisting of Silicon Carbide UMOSFET and Silicon Carbide Schottky Barrier Diode. | |
BSM300C12P3E201 is a SiC (silicon carbide) power module with Low surge and low switching loss, suitable for motro drive, converter, photovoltaics, wind power generation. | |
BSM300D12P2E001 is a half bridge module consisting of Silicon Carbide DMOSFET and Silicon Carbide Schottky Barrier Diode. | |
DTA113ZCA is an digital transistor (Resistor built-in type transistor). Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. | |
DTA113ZCAHZG is the high reliability Automotive transistor, suitable for inverter and interface, driver. | |
DTA114ECA is an digital transistor (Resistor built-in type transistor). Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. | |
DTA114ECAHZG is the high reliability Automotive transistor, suitable for inverter and interface, driver. | |
DTA114EEBHZG is the high reliability Automotive transistor, suitable for inverter and interface, driver. | |
DTA114TCA is an digital transistor (Resistor built-in type transistor). Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. | |
DTA114TCAHZG is the high reliability Automotive transistor, suitable for inverter and interface, driver. | |
DTA114YCA is an digital transistor (Resistor built-in type transistor). Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. | |
DTA114YCAHZG is the high reliability Automotive transistor, suitable for inverter and interface, driver. | |
DTA114YEBHZG is the high reliability Automotive transistor, suitable for inverter and interface, driver. | |
DTA114YUBHZG is the high reliability Automotive transistor, suitable for inverter and interface, driver. | |
DTA115ECA is an digital transistor (Resistor built-in type transistor). Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. | |
DTA115ECAHZG is the high reliability Automotive transistor, suitable for inverter and interface, driver. | |
DTA123ECA is an digital transistor (Resistor built-in type transistor). Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. | |
DTA123ECAHZG is the high reliability Automotive transistor, suitable for inverter and interface, driver. | |
DTA123JCA is an digital transistor (Resistor built-in type transistor). Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. | |
DTA123JCAHZG is the high reliability Automotive transistor, suitable for inverter and interface, driver. | |
DTA123JEBHZG is the high reliability Automotive transistor, suitable for inverter and interface, driver. | |
DTA123JUBHZG is the high reliability Automotive transistor, suitable for inverter and interface, driver. | |
DTA123YCA is an digital transistor (Resistor built-in type transistor). Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. | |
DTA123YCAHZG is the high reliability Automotive transistor, suitable for inverter and interface, driver. | |
DTA123YEBHZG is the high reliability Automotive transistor, suitable for inverter and interface, driver. | |
Half bridge module consisting of ROHM SiC-DMOSFETs and SiC-SBDs. | |
Half bridge module consisting of ROHM SiC-DMOSFETs. | |
Middle power transistor 2SCR542F3 is suitable for Motor driver and LED driver, Power supply. | |
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to... | |
NPN 2.0A 80V Middle Power Transistor | |
NPN 3.0A 50V Middle Power Transistor | |
NPN 5.0A 30V Middle Power Transistor | |
PNP -100mA -50V Digital Transistors(Bias Resistor Built-in Transistors) | |
PNP -2.0A -80V Middle Power Transistor | |
PNP -3.0A -30V Middle Power Transistor | |
PNP -3.0A -50V Middle Power Transistor | |
PNP -5.0A -30V Middle Power Transistor | |
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various... | |
Products are availabel in lineup, developed focusing on energy-saving and high reliability as main concepts and featuring distinctive characteristics. | |
ROHM recommends 2SAR293P as standard spec. | |
ROHM recommends 2SCR293P as standard spec. | |
ROHM recommends DTA015TEB as standard spec. | |
ROHM recommends RE1C001UN as standard spec. | |
ROHM recommends RU1C001UN as standard spec. | |
ROHM recommends RUM001L02 as standard spec. | |
Suitable for the low frequency amplifier. | |
These are the standard products of "digital transistors" which ROHM invented and marketed first in the world. | |
This product is a chopper module consisting of SiC-DMOSFET and SiC-SBD from ROHM. | |
This product is a half bridge module consisting of SiC-DMOSFET and SiC-SBD from ROHM. | |
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market. |
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