N-channel 600V 11A power MOSFET in a TO-263S package, designed for switching applications with low on-resistance (0.39Ω max at 25°C) and fast switching speed. It features a gate-source voltage rating of ±20V, continuous drain current of ±11A at 25°C, peak drain current of ±22A, and power dissipation of 124W. The device has a maximum junction temperature of 150°C, thermal resistance of 1.0°C/W from junction to case, and is RoHS compliant. Avalanche energy is rated at 210mJ for single pulse and 0.32mJ for repetitive events, with a body diode continuous forward current of 11A and reverse recovery time of 430ns.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | R6011ENJ | R6011ENJ |
| Product Name | 600V 11A TO-263, Low-noise Power MOSFET | 10V Drive Nch MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 600 volts | 600 volts |
| IDSS | 11000 milliamps | 11000 milliamps |
| QG | 32 nC | |
| PD | 40000 milliwatts | 40000 milliwatts |
