ROHM Semiconductor USA, LLC Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single R6009JNJGTL

Description
Win Source Part Number: 1201355-R6009JNJGTL Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 1,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V Vgs(th) (Max) @ Id: 7V @ 1.38mA Power Dissipation (Max): 125W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: LPTS Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 72 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Affected HTSUS: 8541.29.0095 Mfr: Rohm Semiconductor Other Names: R6009JNJGTLCT,R6009J NJGTLDKR,R6009JNJGTL TR Base Product Number: R6009 Drive Voltage (Max Rds On, Min Rds On): 15V
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Description
Win Source Part Number: 1201355-R6009JNJGTL Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 1,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V Vgs(th) (Max) @ Id: 7V @ 1.38mA Power Dissipation (Max): 125W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: LPTS Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 72 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Affected HTSUS: 8541.29.0095 Mfr: Rohm Semiconductor Other Names: R6009JNJGTLCT,R6009J NJGTLDKR,R6009JNJGTL TR Base Product Number: R6009 Drive Voltage (Max Rds On, Min Rds On): 15V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1201355-R6009JNJGTL - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1201355-R6009JNJGTL
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1201355-R6009JNJGTL
Win Source Part Number: 1201355-R6009JNJGTL Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 1,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V Vgs(th) (Max) @ Id: 7V @ 1.38mA Power Dissipation (Max): 125W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: LPTS Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 72 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Affected HTSUS: 8541.29.0095 Mfr: Rohm Semiconductor Other Names: R6009JNJGTLCT,R6009J NJGTLDKR,R6009JNJGTL TR Base Product Number: R6009 Drive Voltage (Max Rds On, Min Rds On): 15V

Win Source Part Number: 1201355-R6009JNJGTL
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
Vgs(th) (Max) @ Id: 7V @ 1.38mA
Power Dissipation (Max): 125W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: LPTS
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 72 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Affected
HTSUS: 8541.29.0095
Mfr: Rohm Semiconductor
Other Names: R6009JNJGTLCT,R6009JNJGTLDKR,R6009JNJGTLTR
Base Product Number: R6009
Drive Voltage (Max Rds On, Min Rds On): 15V

Buy Now Datasheet
Single FETs, MOSFETs - R6009JNJGTLDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
R6009JNJGTLDKR-ND
Single FETs, MOSFETs R6009JNJGTLDKR-ND
N-Channel 600V 9A (Tc) 125W (Tc) Surface Mount LPTS

N-Channel 600V 9A (Tc) 125W (Tc) Surface Mount LPTS

Buy Now Datasheet
Single FETs, MOSFETs - R6009JNJGTLCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
R6009JNJGTLCT-ND
Single FETs, MOSFETs R6009JNJGTLCT-ND
N-Channel 600V 9A (Tc) 125W (Tc) Surface Mount LPTS

N-Channel 600V 9A (Tc) 125W (Tc) Surface Mount LPTS

Buy Now Datasheet
Single FETs, MOSFETs - R6009JNJGTLTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
R6009JNJGTLTR-ND
Single FETs, MOSFETs R6009JNJGTLTR-ND
N-Channel 600V 9A (Tc) 125W (Tc) Surface Mount LPTS

N-Channel 600V 9A (Tc) 125W (Tc) Surface Mount LPTS

Buy Now Datasheet
Singapore, Singapore
600V 9A MOSFET Transistor
278-R6009JNJGTL
600V 9A MOSFET Transistor 278-R6009JNJGTL
MOSFET N-CH 600V 9A LPTS Product overview: R6009JNJGTL from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-R6009JNJGTL can be used for catalog matching and distributor lookup.

MOSFET N-CH 600V 9A LPTS Product overview: R6009JNJGTL from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-R6009JNJGTL can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - R6009JNJGTL - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
R6009JNJGTL
Single FETs, MOSFETs R6009JNJGTL
MOSFET N-CH 600V 9A LPTS

MOSFET N-CH 600V 9A LPTS

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - R6009JNJGTL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
R6009JNJGTL
Discrete Semiconductor Products - Transistors - FETs, MOSFETs R6009JNJGTL
MOSFET N-CH 600V 9A LPTS

MOSFET N-CH 600V 9A LPTS

Supplier's Site
Sheung Wan, Hong Kong
MOSFET NCH 600V 9A POWER

MOSFET NCH 600V 9A POWER

Buy Now Datasheet
Mosfet, N-Ch, 9A, 600V, To-263S; Transistor Polarity Rohm - 01AH7809 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 9A, 600V, To-263S; Transistor Polarity Rohm
01AH7809
Mosfet, N-Ch, 9A, 600V, To-263S; Transistor Polarity Rohm 01AH7809
MOSFET, N-CH, 9A, 600V, TO-263S; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.45ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:6V; Power Dissipation RoHS Compliant: Yes

MOSFET, N-CH, 9A, 600V, TO-263S; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.45ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:6V; Power Dissipation RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1201355-R6009JNJGTL R6009JNJGTLDKR-ND 278-R6009JNJGTL R6009JNJGTL R6009JNJGTL R6009JNJGTL 01AH7809
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs 600V 9A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 9A, 600V, To-263S; Transistor Polarity Rohm
Polarity N-Channel N-Channel N-Channel N-Channel; N-Channel
PD 125000 milliwatts 125 milliwatts 125000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-3; TO-263
MOSFET Operating Mode Enhancement
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