Win Source Part Number: 1201355-R6009JNJGTL
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 585mOhm @ 4.5A, 15V
Vgs(th) (Max) @ Id: 7V @ 1.38mA
Power Dissipation (Max): 125W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: LPTS
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 72 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Affected
HTSUS: 8541.29.0095
Mfr: Rohm Semiconductor
Other Names: R6009JNJGTLCT,R6009J
Base Product Number: R6009
Drive Voltage (Max Rds On, Min Rds On): 15V
N-Channel 600V 9A (Tc) 125W (Tc) Surface Mount LPTS
N-Channel 600V 9A (Tc) 125W (Tc) Surface Mount LPTS
N-Channel 600V 9A (Tc) 125W (Tc) Surface Mount LPTS
MOSFET N-CH 600V 9A LPTS Product overview: R6009JNJGTL from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-R6009JNJGTL can be used for catalog matching and distributor lookup.
MOSFET N-CH 600V 9A LPTS
MOSFET N-CH 600V 9A LPTS
MOSFET, N-CH, 9A, 600V, TO-263S; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.45ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:6V; Power Dissipation RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1201355-R6009JNJGTL | R6009JNJGTLDKR-ND | 278-R6009JNJGTL | R6009JNJGTL | R6009JNJGTL | R6009JNJGTL | 01AH7809 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | 600V 9A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 9A, 600V, To-263S; Transistor Polarity Rohm |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| PD | 125000 milliwatts | 125 milliwatts | 125000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3; TO-263 | |
| MOSFET Operating Mode | Enhancement |