ROHM Semiconductor USA, LLC 600V 7A TO252 MOSFET Transistor R6007JND3TL1

MOSFET N-CH 600V 7A TO252 Product overview: R6007JND3TL1 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 7A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 7A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-R6007JND3TL1 can be used for catalog matching and distributor lookup.

N-Channel 600V 7A (Tc) 96W (Tc) Surface Mount TO-252

N-Channel 600V 7A (Tc) 96W (Tc) Surface Mount TO-252

N-Channel 600V 7A (Tc) 96W (Tc) Surface Mount TO-252

Win Source Part Number: 1014243-R6007JND3TL1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3.5A, 15V
Vgs(th) (Max) @ Id: 7V @ 1mA
Power Dissipation (Max): 96W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 77 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Rohm Semiconductor
Other Names: R6007JND3TL1TR,R6007JND3TL1DKR,R6007JND3TL1CT
Base Product Number: R6007
Drive Voltage (Max Rds On, Min Rds On): 15V