QH8K26 is a 40V N-channel dual MOSFET in a TSMT8 surface-mount package, designed for switching and motor drive applications. It has a continuous drain current of ±7.0A and a maximum on-resistance of 38mΩ at 10V gate drive. The device supports a gate-source voltage of ±12V, a junction temperature range of -55°C to +150°C, and is RoHS compliant and halogen-free. Thermal resistance is 83.3°C/W on a ceramic board and 113°C/W on FR4. It meets standard automotive and industrial reliability requirements with no specified qualifications listed.
QH8K26 is low on-resistance and Small Surface Mount Package MOSFET for switching and motor drive.
QH8K26 is low on-resistance and Small Surface Mount Package MOSFET for switching and motor drive.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | QH8K26 | QH8K26 |
| Product Name | 40V Nch+Nch Small Signal MOSFET | 40V Nch+Nch Small Signal MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 40 volts | 40 volts |
| IDSS | 7000 milliamps | 7000 milliamps |
| PD | 2600 milliwatts | 2600 milliwatts |
