The R6011ENX is a 600V N-channel power MOSFET designed for high-performance applications. It features a maximum continuous drain current of ¬±11A and a maximum power dissipation of 53W in a TO-220FM package. The device has a low on-resistance of 0.39Oc, which contributes to improved efficiency in switching applications. It supports fast switching capabilities, making it suitable for various drive circuit designs. The MOSFET is RoHS compliant and features Pb-free plating, ensuring it meets environmental standards. With a gate-source voltage rating of ¬±20V and a junction temperature range of -55 to +150¬8C, the R6011ENX is versatile for different operating conditions. Its specifications make it a reliable choice for engineers looking for efficient power management solutions.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
MOSFET N-CH 600V 11A TO220FM
N-Channel 600V 11A (Tc) 40W (Tc) Through Hole TO-220FM
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1091361-R6011ENX
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 40W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220FM
Dimension: TO-220-2 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 32nC @ 10V
Max Input Capacitance: 670pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 390 mOhm @ 3.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance
MOSFET N-CH 600V 11A TO220FM Product overview: R6011ENX from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-R6011ENX can be used for catalog matching and distributor lookup.
MOSFET N-CH 600V 11A TO220FM
MOSFET, N-CH, 600V, 11A, TO-220FM; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.34ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
| ROHM Semiconductor USA, LLC | ROHM Semiconductor GmbH | ODG (Origin Data Global) | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | R6011ENX | R6011ENX | R6011ENX | R6011ENX-ND | 1091361-R6011ENX | 278-R6011ENX | R6011ENX | R6011ENX | 99Y2391 |
| Product Name | 10V Drive Nch MOSFET | 600V 11A TO-220FM, Low-noise Power MOSFET | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - R6011ENX | 600V 11A MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 600V, 11A, To-220Fm; Transistor Polarity Rohm |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 600 volts | 600 volts | 600 volts | 600 volts | |||||
| IDSS | 11000 milliamps | 11000 milliamps | 11000 milliamps | 11000 milliamps | |||||
| PD | 40000 milliwatts | 40000 milliwatts | 40000 milliwatts | 40000 milliwatts | 53 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) |
