Manufacturer: Rohm Semiconductor
Win Source Part Number: 1036295-EM6K31GT2R
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 2.5V Drive
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: EMT6
Maximum Power Dissipation: 120mW
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 250mA
Gate-Source Threshold Voltage: 2.3V @ 1mA
Max Input Capacitance: 15pF @ 25V
Maximum Rds On at Id,Vgs: 2.4 Ohm @ 250mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
Mosfet Array 2 N-Channel (Dual) 60V 250mA 120mW Surface Mount EMT6
Mosfet Array 2 N-Channel (Dual) 60V 250mA 120mW Surface Mount EMT6
Mosfet Array 2 N-Channel (Dual) 60V 250mA 120mW Surface Mount EMT6
MOSFET 2N-CH 60V 0.25A EMT6
MOSFET 2N-CH 60V 0.25A EMT6
MOSFET 2.5V Drive Nch+Nch MOSFET
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1036295-EM6K31GT2R | EM6K31GT2RDKR-ND | EM6K31GT2R | EM6K31GT2R | EM6K31GT2R |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - EM6K31GT2R | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | FET, MOSFET Arrays | MOSFET |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | |||
| V(BR)DSS | 60 volts | 60 volts | |||
| PD | 120 milliwatts | ||||
| TJ | 150 C (302 F) | 150 C (302 F) |
