Mosfet Array 2 N-Channel (Dual) 30V 10A (Ta), 11A (Ta) 2W (Ta) Surface Mount HSML3030L10
Mosfet Array 2 N-Channel (Dual) 30V 10A (Ta), 11A (Ta) 2W (Ta) Surface Mount HSML3030L10
Mosfet Array 2 N-Channel (Dual) 30V 10A (Ta), 11A (Ta) 2W (Ta) Surface Mount HSML3030L10
30V NCH+NCH POWER MOSFET
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1324435-HS8K1TB
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 3,000
Mounting: Surface Mount
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A, 11A
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 10A, 10V, 11.8mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power - Max: 2W
Supplier Device Package: HSML3030L10
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V, 7.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 348pF @ 15V, 429pF @ 15V
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-UDFN Exposed Pad
ECCN: EAR99
Fake Threat In the Open Market: 77
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: HS8K1TBCT,HS8K1TBDKR
Base Product Number: HS8K1
RoHS Status: ROHS3 Compliant
MOSFET 2N-CH 30V 10A/11A HSML
30V NCH+NCH POWER MOSFET
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Power MOSFET |
| Product Number | HS8K1TBCT-ND | HS8K1TB | 1324435-HS8K1TB | HS8K1TB | HS8K1TB | 687-HS8K1TB |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | 30V NCH+NCH POWER MOSFET |
| Package Type | 8-UDFN Exposed Pad | 8-UDFN Exposed Pad | SOT3; 8-UDFN Exposed Pad | |||
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||
| V(BR)DSS | 30 volts | 30 volts | ||||
| IDSS | 10000 milliamps |