ROHM Semiconductor GmbH 30V Nch+Nch Middle Power MOSFET HP8K22

Manufacturer: Rohm Semiconductor
Win Source Part Number: 275916-HP8K22
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Half Bridge)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-HSOP
Maximum Power Dissipation: 25W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 27A, 57A
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 16.8nC @ 10V
Max Input Capacitance: 1080pF @ 15V
Maximum Rds On at Id,Vgs: 4.6 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited

30V NCH+NCH MID POWER MOSFET Product overview: HP8K22 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-HP8K22 can be used for catalog matching and distributor lookup.