The QS8J5 is a dual P-channel MOSFET in a TSMT8 surface-mount package designed for switching applications. It has a drain-source voltage rating of -30 V and a continuous drain current of ±5 A per element. The typical on-state resistance is 28 mΩ at -10 V gate-source voltage and -5 A drain current. The device includes built-in gate-source protection diodes and is RoHS compliant. Thermal resistance from junction to ambient is 83.3 °C/W when mounted on a ceramic board (30×30×0.8 mm). The junction operating temperature range is -55 °C to +150 °C. It meets RoHS standards and is packaged in tape and reel format with 3000 pieces per reel.
Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | QS8J5 | QS8J5 |
| Product Name | 4V Drive Pch+Pch MOSFET | 4V Drive Pch+Pch MOSFET |
| Polarity | P-Channel | P-Channel |
| V(BR)DSS | -30 volts | -30 volts |
| IDSS | -5000 milliamps | -5000 milliamps |
| PD | 1500 milliwatts | 1500 milliwatts |
