ROHM Semiconductor USA, LLC Single FETs, MOSFETs R6015ANZC8

Description
N-Channel 600V 15A (Tc) 110W (Tc) Through Hole TO-3PF
Request a Quote Datasheet
Description
N-Channel 600V 15A (Tc) 110W (Tc) Through Hole TO-3PF
Request a Quote Datasheet

Suppliers

Company
Product
Description
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Single FETs, MOSFETs - R6015ANZC8-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
R6015ANZC8-ND
Single FETs, MOSFETs R6015ANZC8-ND
N-Channel 600V 15A (Tc) 110W (Tc) Through Hole TO-3PF

N-Channel 600V 15A (Tc) 110W (Tc) Through Hole TO-3PF

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - R6015ANZC8 - 1091364-R6015ANZC8 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - R6015ANZC8
1091364-R6015ANZC8
TRANSISTORS - Transistors - FETs, MOSFETs - RF - R6015ANZC8 1091364-R6015ANZC8
Manufacturer: Rohm Semiconductor Win Source Part Number: 1091364-R6015ANZC8 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: 150°C (TJ) Case / Package: TO-3PF Dimension: TO-3P-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 15A (Tc) Gate-Source Threshold Voltage: 4.15V @ 1mA Max Gate Charge: 50nC @ 10V Max Input Capacitance: 1700pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 300 mOhm @ 7.5A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance

Manufacturer: Rohm Semiconductor
Win Source Part Number: 1091364-R6015ANZC8
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-3PF
Dimension: TO-3P-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 15A (Tc)
Gate-Source Threshold Voltage: 4.15V @ 1mA
Max Gate Charge: 50nC @ 10V
Max Input Capacitance: 1700pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 300 mOhm @ 7.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - R6015ANZC8 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
R6015ANZC8
Discrete Semiconductor Products - Transistors - FETs, MOSFETs R6015ANZC8
MOSFET N-CH 600V 15A TO3PF

MOSFET N-CH 600V 15A TO3PF

Supplier's Site
Sheung Wan, Hong Kong
MOSFET Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-3PF Bulk

MOSFET Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-3PF Bulk

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number R6015ANZC8-ND 1091364-R6015ANZC8 R6015ANZC8 R6015ANZC8
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - R6015ANZC8 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-3; TO-3P-3 Full Pack TO-3; SOT3; TO-3PF TO-3P-3 Full Pack
V(BR)DSS 600 volts
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