ROHM Semiconductor USA, LLC Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single R6020JNXC7G

Description
Win Source Part Number: 1019103-R6020JNXC7G Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V Vgs(th) (Max) @ Id: 7V @ 3.5mA Power Dissipation (Max): 76W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FM Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 53 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Rohm Semiconductor Base Product Number: R6020 Drive Voltage (Max Rds On, Min Rds On): 15V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1019103-R6020JNXC7G - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - R6020JNXC7G-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - R6020JNXC7G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 20A, 600V, To-220Fm; Transistor Polarity Rohm - 01AH7816 - Newark, An Avnet Company
    Newark, An Avnet Company
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Description
Win Source Part Number: 1019103-R6020JNXC7G Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V Vgs(th) (Max) @ Id: 7V @ 3.5mA Power Dissipation (Max): 76W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FM Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 53 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Rohm Semiconductor Base Product Number: R6020 Drive Voltage (Max Rds On, Min Rds On): 15V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1019103-R6020JNXC7G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1019103-R6020JNXC7G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1019103-R6020JNXC7G
Win Source Part Number: 1019103-R6020JNXC7G Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V Vgs(th) (Max) @ Id: 7V @ 3.5mA Power Dissipation (Max): 76W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FM Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 53 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Rohm Semiconductor Base Product Number: R6020 Drive Voltage (Max Rds On, Min Rds On): 15V

Win Source Part Number: 1019103-R6020JNXC7G
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
Vgs(th) (Max) @ Id: 7V @ 3.5mA
Power Dissipation (Max): 76W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FM
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 53 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Rohm Semiconductor
Base Product Number: R6020
Drive Voltage (Max Rds On, Min Rds On): 15V

Buy Now Datasheet
Single FETs, MOSFETs - R6020JNXC7G-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
R6020JNXC7G-ND
Single FETs, MOSFETs R6020JNXC7G-ND
N-Channel 600V 20A (Tc) 76W (Tc) Through Hole TO-220FM

N-Channel 600V 20A (Tc) 76W (Tc) Through Hole TO-220FM

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - R6020JNXC7G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
R6020JNXC7G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs R6020JNXC7G
MOSFET N-CH 600V 20A TO220FM

MOSFET N-CH 600V 20A TO220FM

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
R6020JNXC7G
MOSFET R6020JNXC7G
MOSFET NCH 600V 20A POWER

MOSFET NCH 600V 20A POWER

Buy Now Datasheet
Mosfet, N-Ch, 20A, 600V, To-220Fm; Transistor Polarity Rohm - 01AH7816 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 20A, 600V, To-220Fm; Transistor Polarity Rohm
01AH7816
Mosfet, N-Ch, 20A, 600V, To-220Fm; Transistor Polarity Rohm 01AH7816
MOSFET, N-CH, 20A, 600V, TO-220FM; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.18ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:6V; Power RoHS Compliant: Yes

MOSFET, N-CH, 20A, 600V, TO-220FM; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.18ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:6V; Power RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1019103-R6020JNXC7G R6020JNXC7G-ND R6020JNXC7G R6020JNXC7G 01AH7816
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 20A, 600V, To-220Fm; Transistor Polarity Rohm
Polarity N-Channel N-Channel
PD 76000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
Package Type TO-220; SOT3 TO-220; TO-220-3 Full Pack TO-220; TO-220-3 Full Pack TO-3; TO-220
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