ROHM Semiconductor USA, LLC Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single R6020JNXC7G

Description
Win Source Part Number: 1019103-R6020JNXC7G Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V Vgs(th) (Max) @ Id: 7V @ 3.5mA Power Dissipation (Max): 76W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FM Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 53 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Rohm Semiconductor Base Product Number: R6020 Drive Voltage (Max Rds On, Min Rds On): 15V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1019103-R6020JNXC7G - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - R6020JNXC7G-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - R6020JNXC7G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 20A, 600V, To-220Fm; Transistor Polarity Rohm - 01AH7816 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Win Source Part Number: 1019103-R6020JNXC7G Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V Vgs(th) (Max) @ Id: 7V @ 3.5mA Power Dissipation (Max): 76W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FM Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 53 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Rohm Semiconductor Base Product Number: R6020 Drive Voltage (Max Rds On, Min Rds On): 15V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1019103-R6020JNXC7G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1019103-R6020JNXC7G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1019103-R6020JNXC7G
Win Source Part Number: 1019103-R6020JNXC7G Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V Vgs(th) (Max) @ Id: 7V @ 3.5mA Power Dissipation (Max): 76W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FM Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 53 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Rohm Semiconductor Base Product Number: R6020 Drive Voltage (Max Rds On, Min Rds On): 15V

Win Source Part Number: 1019103-R6020JNXC7G
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
Vgs(th) (Max) @ Id: 7V @ 3.5mA
Power Dissipation (Max): 76W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FM
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 53 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Rohm Semiconductor
Base Product Number: R6020
Drive Voltage (Max Rds On, Min Rds On): 15V

Buy Now Datasheet
Single FETs, MOSFETs - R6020JNXC7G-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
R6020JNXC7G-ND
Single FETs, MOSFETs R6020JNXC7G-ND
N-Channel 600V 20A (Tc) 76W (Tc) Through Hole TO-220FM

N-Channel 600V 20A (Tc) 76W (Tc) Through Hole TO-220FM

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - R6020JNXC7G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
R6020JNXC7G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs R6020JNXC7G
MOSFET N-CH 600V 20A TO220FM

MOSFET N-CH 600V 20A TO220FM

Supplier's Site
Mosfet, N-Ch, 20A, 600V, To-220Fm; Transistor Polarity Rohm - 01AH7816 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 20A, 600V, To-220Fm; Transistor Polarity Rohm
01AH7816
Mosfet, N-Ch, 20A, 600V, To-220Fm; Transistor Polarity Rohm 01AH7816
MOSFET, N-CH, 20A, 600V, TO-220FM; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.18ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:6V; Power RoHS Compliant: Yes

MOSFET, N-CH, 20A, 600V, TO-220FM; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.18ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:6V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
R6020JNXC7G
MOSFET R6020JNXC7G
MOSFET NCH 600V 20A POWER

MOSFET NCH 600V 20A POWER

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1019103-R6020JNXC7G R6020JNXC7G-ND R6020JNXC7G 01AH7816 R6020JNXC7G
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 20A, 600V, To-220Fm; Transistor Polarity Rohm MOSFET
Polarity N-Channel N-Channel
PD 76000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
Package Type TO-220; SOT3 TO-220; TO-220-3 Full Pack TO-220; TO-220-3 Full Pack TO-3; TO-220
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