MOSFET, one of Fild Effect Transistors. ROHM has low current type power MOSFETs of high-efficiency / high breakdown resistance for switching power supply to meet various needs in the market.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 083868-R5007ANX
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 40W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220FM
Dimension: TO-220-2 Full Pack
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 7A (Ta)
Gate-Source Threshold Voltage: 4.5V @ 1mA
Max Gate Charge: 13nC @ 10V
Max Input Capacitance: 500pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.05 Ohm @ 3.5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
MOSFET N-CH 500V 7A TO220FM Product overview: R5007ANX from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-R5007ANX can be used for catalog matching and distributor lookup.
N-Channel 500V 7A (Ta) 40W (Tc) Through Hole TO-220FM
MOSFET N-CH 500V 7A TO220FM
MOSFET Silicon N-channel MOSFET, 10V Drive, N-Channel, Contains G-S protection diode, Low on-resistance, Fast switching, Wide SOA
| ROHM Semiconductor USA, LLC | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | R5007ANX | 083868-R5007ANX | 278-R5007ANX | R5007ANX-ND | R5007ANX | R5007ANX |
| Product Name | 10V Drive Nch MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - R5007ANX | 500V 7A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 500 volts | 500 volts | ||||
| IDSS | 7000 milliamps | |||||
| PD | 40000 milliwatts | 40000 milliwatts | 40 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | 150 C (302 F) | 150 C (302 F) |
