ROHM Semiconductor USA, LLC 10V Drive Nch MOSFET R5007ANX

Description
MOSFET, one of Fild Effect Transistors. ROHM has low current type power MOSFETs of high-efficiency / high breakdown resistance for switching power supply to meet various needs in the market.
Request a Quote Datasheet
Description
MOSFET, one of Fild Effect Transistors. ROHM has low current type power MOSFETs of high-efficiency / high breakdown resistance for switching power supply to meet various needs in the market.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
10V Drive Nch MOSFET - R5007ANX - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
10V Drive Nch MOSFET
R5007ANX
10V Drive Nch MOSFET R5007ANX
MOSFET, one of Fild Effect Transistors. ROHM has low current type power MOSFETs of high-efficiency / high breakdown resistance for switching power supply to meet various needs in the market.

MOSFET, one of Fild Effect Transistors. ROHM has low current type power MOSFETs of high-efficiency / high breakdown resistance for switching power supply to meet various needs in the market.

Supplier's Site Datasheet
Singapore, Singapore
500V 7A MOSFET Transistor
278-R5007ANX
500V 7A MOSFET Transistor 278-R5007ANX
MOSFET N-CH 500V 7A TO220FM Product overview: R5007ANX from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-R5007ANX can be used for catalog matching and distributor lookup.

MOSFET N-CH 500V 7A TO220FM Product overview: R5007ANX from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-R5007ANX can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - R5007ANX-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
R5007ANX-ND
Single FETs, MOSFETs R5007ANX-ND
N-Channel 500V 7A (Ta) 40W (Tc) Through Hole TO-220FM

N-Channel 500V 7A (Ta) 40W (Tc) Through Hole TO-220FM

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - R5007ANX - 083868-R5007ANX - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - R5007ANX
083868-R5007ANX
TRANSISTORS - Transistors - FETs, MOSFETs - RF - R5007ANX 083868-R5007ANX
Manufacturer: Rohm Semiconductor Win Source Part Number: 083868-R5007ANX Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220FM Dimension: TO-220-2 Full Pack Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 7A (Ta) Gate-Source Threshold Voltage: 4.5V @ 1mA Max Gate Charge: 13nC @ 10V Max Input Capacitance: 500pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.05 Ohm @ 3.5A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance

Manufacturer: Rohm Semiconductor
Win Source Part Number: 083868-R5007ANX
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 40W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220FM
Dimension: TO-220-2 Full Pack
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 7A (Ta)
Gate-Source Threshold Voltage: 4.5V @ 1mA
Max Gate Charge: 13nC @ 10V
Max Input Capacitance: 500pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.05 Ohm @ 3.5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET
R5007ANX
MOSFET R5007ANX
MOSFET Silicon N-channel MOSFET, 10V Drive, N-Channel, Contains G-S protection diode, Low on-resistance, Fast switching, Wide SOA

MOSFET Silicon N-channel MOSFET, 10V Drive, N-Channel, Contains G-S protection diode, Low on-resistance, Fast switching, Wide SOA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - R5007ANX - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
R5007ANX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs R5007ANX
MOSFET N-CH 500V 7A TO220FM

MOSFET N-CH 500V 7A TO220FM

Supplier's Site

Technical Specifications

  ROHM Semiconductor USA, LLC ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number R5007ANX 278-R5007ANX R5007ANX-ND 083868-R5007ANX R5007ANX R5007ANX
Product Name 10V Drive Nch MOSFET 500V 7A MOSFET Transistor Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - R5007ANX MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 500 volts 500 volts
IDSS 7000 milliamps
PD 40000 milliwatts 40 milliwatts 40000 milliwatts
TJ -55 to 150 C (-67 to 302 F) 150 C (302 F) 150 C (302 F)
Unlock Full Specs
to access all available technical data