ROHM Semiconductor USA, LLC Single FETs, MOSFETs ES6U1T2R

P-Channel 12V 1.3A (Ta) 700mW (Ta) Surface Mount 6-WEMT

Manufacturer: Rohm Semiconductor
Win Source Part Number: 051243-ES6U1T2R
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: P-Channel
Power Dissipation (Max): 700mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 6-WEMT
Dimension: SOT-563, SOT-666
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 1.3A (Ta)
Gate-Source Threshold Voltage: 1V @ 1mA
Max Gate Charge: 2.4nC @ 4.5V
Max Input Capacitance: 290pF @ 6V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 260 mOhm @ 1.3A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

MOSFET P-CH 12V 1.3A 6WEMT Product overview: ES6U1T2R from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 1.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 1.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ES6U1T2R can be used for catalog matching and distributor lookup.