Small-Signal Bipolar Transistors (BJT) Datasheets

Small-signal bipolar transistors (BJT) are semiconductors that amplify small AC or DC signals. They consist of a base n-type or p-type layer sandwiched between emitter and collector layers of the opposite type.
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Small-Signal Bipolar Transistors (BJT) Datasheets From:
Headquarters
Richardson RFPD
United States
RS Components, Ltd.
United Kingdom
DigiKey
United States
LIXINC Electronics Co., Limited
China
TE Connectivity
United States
Acme Chip Technology Co., Limited
China
Karl Kruse GmbH & Co. KG
Germany
ROHM Semiconductor GmbH
Germany
Shenzhen Shengyu Electronics Technology Limited
China
Toshiba America, Inc.
New York, NY
TT Semiconductor, Inc.
Anaheim, CA
Utmel Electronic Limited
China
Allied Electronics, Inc.
Fort Worth, TX
Assmann WSW Components, Inc.
United States
EDAC, Inc.
Canada
EVVO Semi
China
Guangdong Fenghua Advanced Technology Group Co., Ltd.
China
HARTING Inc. of North America
Elgin, IL
Hitachi America, Ltd., Industrial Components and Equipment Division
United States
Inventus Power
United States
ITT Inc.
United States
ITT Cannon
United States
JSMicro Semiconductor Co., Ltd.
China
KEC Corporation
Korea, South
Kycon, Inc.
United States
LAPIS Semiconductor
Japan
Leshan Radio Co., Ltd.
China
Motorola Solutions, Inc.
United States
multicomp PRO
Chicago, IL
Newark, An Avnet Company
United States
NorComp
United States
Parallax, Inc.
United States
Plessey Semiconductors, Ltd.
United Kingdom
ROHM Co., Ltd.
Japan
Sanyo Denki America, Inc.
Torrance, CA
Sanyo Machine America
United States
Semelab Plc.
United Kingdom
Shenzhen Luguang Electronic Technology Co., Ltd.
China
Solid State, Inc.
United States
STMicroelectronics, Inc.
United States
Teledyne Relays
United States
Texas Instruments High-Performance Analog
United States
THAT Corporation
United States
Toshiba Corporation
Japan
Toshiba Imaging Systems Division
Irvine, CA
Toshiba Semiconductor & Storage Products
United States
Unisonic Technologies Co., Ltd.
China