ROHM Semiconductor USA, LLC 30V Nch+Pch Small Signal MOSFET QS8M13

Description
Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Datasheet
Description
Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Datasheet

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30V Nch+Pch Small Signal MOSFET - QS8M13 - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
30V Nch+Pch Small Signal MOSFET
QS8M13
30V Nch+Pch Small Signal MOSFET QS8M13
Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor USA, LLC
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number QS8M13
Product Name 30V Nch+Pch Small Signal MOSFET
Polarity N-Channel; P-Channel
V(BR)DSS 30 volts
IDSS 6000 milliamps
PD 1500 milliwatts
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