The QS5U26 is a combined P-channel MOSFET and Schottky barrier diode in a TSMT5 package, designed for load switch and DC/DC conversion applications with 2.5V gate drive. It has a drain-source voltage rating of -20V, continuous drain current of ±1.5A, and total power dissipation of 1.25W. The MOSFET features a maximum on-state resistance of 240mΩ at -4V gate-source voltage and 340mΩ at -2.5V, with a built-in Schottky diode having a forward voltage of up to 0.47V at 0.5A. The device is RoHS compliant and operates within a junction temperature range of -55°C to +150°C.
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1241313-QS5U26
Manufacturer Homepage: www.rohm.com
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Limited
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | Win Source Electronics | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | QS5U26 | QS5U26 | 1241313-QS5U26 |
| Product Name | 2.5V Drive Pch+SBD MOSFET | 2.5V Drive Pch+SBD MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - QS5U26 |
| Polarity | P-Channel | P-Channel | |
| V(BR)DSS | -20 volts | -20 volts | |
| IDSS | -1500 milliamps | -1500 milliamps | |
| PD | 900 milliwatts | 900 milliwatts |
