ROHM Semiconductor USA, LLC 10V Drive Nch MOSFET R6012FNJ

Description
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Datasheet
Description
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Datasheet

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10V Drive Nch MOSFET - R6012FNJ - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
10V Drive Nch MOSFET
R6012FNJ
10V Drive Nch MOSFET R6012FNJ
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor USA, LLC
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number R6012FNJ
Product Name 10V Drive Nch MOSFET
Polarity N-Channel
V(BR)DSS 600 volts
IDSS 12000 milliamps
PD 50000 milliwatts
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