ROHM Semiconductor USA, LLC TRANSISTORS - Transistors - FETs, MOSFETs - RF - QS8K11TCR QS8K11TCR

Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 1091090-QS8K11TCR Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TSMT8 Maximum Power Dissipation: 1.5W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 3.5A Gate-Source Threshold Voltage: 2.5V @ 1mA Max Gate Charge: 3.3nC @ 5V Max Input Capacitance: 180pF @ 10V Maximum Rds On at Id,Vgs: 50 mOhm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 1091090-QS8K11TCR Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TSMT8 Maximum Power Dissipation: 1.5W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 3.5A Gate-Source Threshold Voltage: 2.5V @ 1mA Max Gate Charge: 3.3nC @ 5V Max Input Capacitance: 180pF @ 10V Maximum Rds On at Id,Vgs: 50 mOhm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - QS8K11TCR - 1091090-QS8K11TCR - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - QS8K11TCR
1091090-QS8K11TCR
TRANSISTORS - Transistors - FETs, MOSFETs - RF - QS8K11TCR 1091090-QS8K11TCR
Manufacturer: Rohm Semiconductor Win Source Part Number: 1091090-QS8K11TCR Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TSMT8 Maximum Power Dissipation: 1.5W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 3.5A Gate-Source Threshold Voltage: 2.5V @ 1mA Max Gate Charge: 3.3nC @ 5V Max Input Capacitance: 180pF @ 10V Maximum Rds On at Id,Vgs: 50 mOhm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance

Manufacturer: Rohm Semiconductor
Win Source Part Number: 1091090-QS8K11TCR
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TSMT8
Maximum Power Dissipation: 1.5W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 3.5A
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 3.3nC @ 5V
Max Input Capacitance: 180pF @ 10V
Maximum Rds On at Id,Vgs: 50 mOhm @ 3.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
FET, MOSFET Arrays - QS8K11TCRDKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
QS8K11TCRDKR-ND
FET, MOSFET Arrays QS8K11TCRDKR-ND
Mosfet Array 2 N-Channel (Dual) 30V 3.5A 1.5W Surface Mount TSMT8

Mosfet Array 2 N-Channel (Dual) 30V 3.5A 1.5W Surface Mount TSMT8

Buy Now Datasheet
FET, MOSFET Arrays - QS8K11TCRCT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
QS8K11TCRCT-ND
FET, MOSFET Arrays QS8K11TCRCT-ND
Mosfet Array 2 N-Channel (Dual) 30V 3.5A 1.5W Surface Mount TSMT8

Mosfet Array 2 N-Channel (Dual) 30V 3.5A 1.5W Surface Mount TSMT8

Buy Now Datasheet
FET, MOSFET Arrays - QS8K11TCRTR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
QS8K11TCRTR-ND
FET, MOSFET Arrays QS8K11TCRTR-ND
Mosfet Array 2 N-Channel (Dual) 30V 3.5A 1.5W Surface Mount TSMT8

Mosfet Array 2 N-Channel (Dual) 30V 3.5A 1.5W Surface Mount TSMT8

Buy Now Datasheet
4V DRIVE NCH+NCH MOSFET - 687-QS8K11TCR - Utmel Electronic Limited
Hong Kong, China
4V DRIVE NCH+NCH MOSFET
687-QS8K11TCR
4V DRIVE NCH+NCH MOSFET 687-QS8K11TCR
4V DRIVE NCH+NCH MOSFET

4V DRIVE NCH+NCH MOSFET

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - QS8K11TCR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
QS8K11TCR
Discrete Semiconductor Products - Transistors - FETs, MOSFETs QS8K11TCR
MOSFET 2N-CH 30V 3.5A TSMT8

MOSFET 2N-CH 30V 3.5A TSMT8

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 4V Drive Nch+Nch Si MOSFET

MOSFET 4V Drive Nch+Nch Si MOSFET

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Technical Specifications

  Win Source Electronics DigiKey Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1091090-QS8K11TCR QS8K11TCRDKR-ND 687-QS8K11TCR QS8K11TCR QS8K11TCR
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - QS8K11TCR FET, MOSFET Arrays 4V DRIVE NCH+NCH MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel
V(BR)DSS 30 volts 30 volts
PD 1500 milliwatts 1500 milliwatts
TJ 150 C (302 F) 150 C (302 F)
Package Type SOT3; TSMT8 8-SMD, Flat Leads
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