QS6K1 is a dual N-channel MOSFET in a TSMT6 surface-mount package for switching applications, with a 30 V drain-source voltage rating, ±1.0 A continuous drain current, and a maximum on-resistance of 238 mΩ at 4.5 V gate drive. It features built-in gate-source protection diodes and operates over a junction temperature range of -55 to +150 °C. The device is supplied in tape and reel packaging of 3000 pieces per reel.
Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | QS6K1 | QS6K1 |
| Product Name | 2.5V Drive Nch+Nch MOSFET | 2.5V Drive Nch+Nch MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 30 volts | 30 volts |
| IDSS | 1000 milliamps | 1000 milliamps |
| PD | 1250 milliwatts | 1250 milliwatts |
