ROHM Semiconductor USA, LLC FETs - Single - R6020ANZC8 R6020ANZC8

Manufacturer: Rohm Semiconductor
Win Source Part Number: 811586-R6020ANZC8
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600V
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: 150°C
Manufacturer Package: TO-3P-3 Full Pack
Power Dissipation (Maximum): 120W (Tc)
Popularity: Low
Fake Threat In the Open Market: 85 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 360
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 220mOhm at 10A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 65nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 2040pF at 25V
Current - Continuous Drain (Id) at 25°C: 20A
Vgs(th) (Maximum) at Id: 4.15V at 1mA
Maximum Vgs: ±30V

MOSFET N-CH 600V 20A TO3PF Product overview: R6020ANZC8 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 20A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 20A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-R6020ANZC8 can be used for catalog matching and distributor lookup.

N-Channel 600V 20A (Ta) 120W (Tc) Through Hole TO-3PF