The QS5U23 is a 2.5V-drive P-channel MOSFET with an integrated Schottky barrier diode in a TSMT5 package, designed for load switching and DC/DC conversion. It has a drain-source voltage rating of -20V, a continuous drain current of ±1.5A, and a maximum power dissipation of 1.25W. The on-state resistance is 200mΩ at -4.5V gate drive and 240mΩ at -4V gate drive. The built-in Schottky diode has a forward voltage of 0.47V at 0.5A and a reverse current of 100μA at 20V. The device is RoHS compliant and operates from -55°C to +150°C. The TSMT5 package has a footprint designed for surface-mount assembly.
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | QS5U23 | QS5U23 |
| Product Name | 2.5V Drive Pch+SBD MOSFET | 2.5V Drive Pch+SBD MOSFET |
| Polarity | P-Channel | P-Channel |
| V(BR)DSS | -20 volts | -20 volts |
| IDSS | -1500 milliamps | -1500 milliamps |
| PD | 900 milliwatts | 900 milliwatts |
