ROHM Semiconductor USA, LLC Datasheets for Bipolar RF Transistors

Bipolar RF transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
Bipolar RF Transistors: Learn more

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Product Name Notes
2SAR293P5 is Low VCE(sat) Middle Power Driver Transistor for Low Frequency Amplifier.
2SAR512P5 is Low saturation voltage and high speed switching transistor for low frequency amplifier.
2SAR544P5 is Low saturation voltage and high speed switching transistor for low frequency amplifier.
2SAR554P5 is Low saturation voltage and high speed switching transistor for low frequency amplifier.
PNP -3.0A -30V Middle Power Transistor
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.

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