MOSFET N-CH 600V 6A TO252 Product overview: R6006KND3TL1 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 6A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 6A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-R6006KND3TL1 can be used for catalog matching and distributor lookup.
Win Source Part Number: 981179-R6006KND3TL1
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 830mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Power Dissipation (Max): 70W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 48 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Rohm Semiconductor
Other Names: 846-R6006KND3TL1TR,8
Base Product Number: R6006
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 600V 6A (Tc) 70W (Tc) Surface Mount TO-252
N-Channel 600V 6A (Tc) 70W (Tc) Surface Mount TO-252
N-Channel 600V 6A (Tc) 70W (Tc) Surface Mount TO-252
MOSFET N-CH 600V 6A TO252
MOSFET NCH 600V 6A POWER MOSFET
MOSFET, N-CH, 600V, 6A, 150DEG C, 70W; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.72ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power RoHS Compliant: Yes
MOSFET N-CH 600V 6A TO252
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-R6006KND3TL1 | 981179-R6006KND3TL1 | 846-R6006KND3TL1TR-ND | R6006KND3TL1 | R6006KND3TL1 | 38AH5892 | R6006KND3TL1 |
| Product Name | 600V 6A TO252 MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 600V, 6A, 150Deg C, 70W; Transistor Polarity Rohm | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| Transconductance | 0.0015 kS | ||||||
| PD | 70 milliwatts | 70000 milliwatts | 70000 milliwatts | ||||
| TJ | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) |
